for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 gaas hemt mmic low noise amplifier, 14 - 27 ghz v00.1108 general description features functional diagram noise f igure: 2.2 db @ 20 ghz gain: 19 db p 1db o utput p ower: +17 dbm s upply voltage: +4v @ 90ma o utput ip 3: +26 dbm 50 o hm matched i nput/ o utput 24 l ead 4x4mm sm t p ackage: 16mm 2 electrical specifcations , t a = +25 c, vdd = +4v, idd = 90 ma [2] typical applications this h m c504 l c4b is ideal for: ? p oint-to- p oint r adios ? p oint-to- m ulti- p oint r adios ? m ilitary & s pace ? test i nstrumentation the h m c504 l c4b is a gaas mmi c l ow noise w ideband amplifer housed in a leadless 4x4 mm cer- amic surface mount package. the amplifer operates between 14 and 27 ghz, providing up to 19 db of small signal gain, 2.2 db noise fgure, and output ip 3 of +26 dbm, while requiring only 90 ma from a +4v supply. the p 1db output power of up to +17 dbm enables the l na to function as a lo driver for balan- ced, i /q or image reject mixers. the h m c504 l c4b also features i / o s that are dc blocked and internally matched to 50 o hms, making it ideal for high cap- acity microwave radios or v s at applications. this versatile l na is also available in die form as the h m c- a l h476. HMC504LC4B p arameter m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. units f requency r ange 14 - 20 20 - 24 24 - 27 ghz gain [1] 16.5 19 16 18.5 14 17 db gain variation over temperature 0.015 0.017 0.018 db / c noise f igure [1] 2.2 3 2.5 4.2 4.5 6 db i nput r eturn l oss 15 9 7 db o utput r eturn l oss 15 12 9.5 db o utput p ower for 1 db compression [1] 15 16.5 17 dbm s aturated o utput p ower ( p sat) [1] 19.5 19.5 19 dbm o utput third o rder i ntercept ( ip 3) 24.5 25.5 26 dbm s upply current ( i dd) (vdd = 4v, vgg = -0.3v typ.) 90 90 90 ma [1] board loss subtracted out for gain, power and noise fgure measurement [2] adjust vgg between -1 to 0.3v to achieve i dd = 90ma
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 HMC504LC4B v00.1108 gaas hemt mmic low noise amplifier, 14 - 27 ghz gain vs. temperature [1] output return loss vs. temperature broadband gain & return loss [1] input return loss vs. temperature output ip3 vs. temperature noise figure vs. temperature [1] [1] board loss subtracted out for gain, power and noise fgure measurement -25 -15 -5 5 15 25 10 12 14 16 18 20 22 24 26 28 30 32 s21 s11 s22 response (db) frequency (ghz) -25 -20 -15 -10 -5 0 13 15 17 19 21 23 25 27 29 +25c +85c - 40c return loss (db) frequency (ghz) 0 2 4 6 8 10 13 15 17 19 21 23 25 27 +25c +85c - 40c noise figure (db) frequency (ghz) 5 10 15 20 25 30 35 13 15 17 19 21 23 25 27 29 +25c +85c - 40c ip3 (dbm) frequency (ghz) -25 -20 -15 -10 -5 0 13 15 17 19 21 23 25 27 29 +25c +85c - 40c return loss (db) frequency (ghz) 10 12 14 16 18 20 22 13 15 17 19 21 23 25 27 29 +25c +85c - 40c gain (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 HMC504LC4B v00.1108 gaas hemt mmic low noise amplifier, 14 - 27 ghz psat vs. temperature [1] power compression @ 21 ghz [1] p1db vs. temperature [1] reverse isolation vs. temperature gain, noise figure & power vs. supply voltage @ 21 ghz [1] [1] board loss subtracted out for gain, power and noise fgure measurement 8 10 12 14 16 18 20 22 0 1 2 3 4 5 6 7 3.5 4 4.5 gain (db), p1db (dbm) noise figure (db) vdd (v) -4 0 4 8 12 16 20 -20 -15 -10 -5 0 5 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -60 -50 -40 -30 -20 -10 0 13 15 17 19 21 23 25 27 29 +25c +85c - 40c isolation (db) frequency (ghz) 4 8 12 16 20 24 13 15 17 19 21 23 25 27 29 +25c +85c - 40c psat (dbm) frequency (ghz) 0 4 8 12 16 20 13 15 17 19 21 23 25 27 29 +25c +85c - 40c p1db (dbm) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 outline drawing absolute maximum ratings ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s drain bias voltage +4.5v rf i nput p ower +6 dbm gate bias voltage -1 to 0.3v channel temperature 180 c continuous p diss (t = 85 c) (derate 20 m w /c above 85 c) 1.9 w thermal r esistance (channel to die bottom) 50 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c HMC504LC4B v00.1108 gaas hemt mmic low noise amplifier, 14 - 27 ghz n ot es : 1. p ackag e b o dy m at eri a l : a lu mi na. 2. le ad and g ro und p add le pl at i ng: g ol d fl a s h o v er n i ck el . 3. d ime n sio n s a re i n i nch es ( millime t ers ). 4. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e . 5. p ackag e w a rp s ha ll n ot e xc ee d 0.05 mm datu m C c C 6. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 HMC504LC4B v00.1108 gaas hemt mmic low noise amplifier, 14 - 27 ghz p in number f unction description i nterface s chematic 1 - 3, 5 - 8, 11 - 16, 18, 19, 24 gnd p ackage bottom has exposed metal paddle that must be connected to rf /dc ground. 4 rfi n this pad is ac coupled and matched to 50 o hms. 17 rfo ut this pad is ac coupled and matched to 50 o hms. 20 vgg gate control for amplifer. p lease follow mmi c amplifer bias - ing p rocedure application note. s ee assembly for required external components. 21 vdd p ower s upply voltage for the amplifer. s ee assembly for required external components. pin descriptions application circuit component value c1, c2 100 p f c3, c4 10,000 p f c5, c6 4.7 f
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 HMC504LC4B v00.1108 gaas hemt mmic low noise amplifier, 14 - 27 ghz i tem description j1, j2 2.92mm p cb mount k-connector j3 - j6 dc p in c1, c2 100 p f capacitor, 0402 p kg. c3, c4 10,000p f capacitor, 0603 p kg. c5, c6 4.7 f capacitor, tantalum u1 h m c504 l c4b amplifer p cb [2] 122787 e valuation p cb [3] [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon 25 fr [3] due to the very high frequency operation of this product a custom lc4b pcb footprint and solder stencil are required for this design. performance shown in this data sheet was produced using this custom footprint. do not use hittites standard lc4b footprint. please contact applications for details. list of materials for evaluation pcb 122789 [1] the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request. evaluation pcb
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